NONLINEAR DYNAMICS OF SMALL PERTURBATION OF SEMICONDUCTOR SUPERLATTICE REFERENCE STATE NEAR GENERATION THRESHOLD
Cite this article as:
Alekseev К. N., Balanov А. G., Koronovskii A. A., Maksimenko V. А., Moskalenko О. I., Hramov A. E. NONLINEAR DYNAMICS OF SMALL PERTURBATION OF SEMICONDUCTOR SUPERLATTICE REFERENCE STATE NEAR GENERATION THRESHOLD. Izvestiya VUZ. Applied Nonlinear Dynamics, 2012, vol. 20, iss. 5, pp. 165-178. DOI: https://doi.org/10.18500/0869-6632-2012-20-5-165-178
Present research is focused on the dynamics of the perturbation of semiconductor superlattice (SL) reference state near the generation threshold as for the case of influence of titled magnetic field as for the case when the magnetic field is absent. The evolution of the considered perturbation is described with the help of linearized evolution operator. It has been shown that increase of the applied voltage leads to decrease of the attenuation coefficient, which becomes zero in bifurcation point where stationary state loses it’s stability. Meanwhile, the applied titled magnetic field has an strong effect on the perturbation dynamics, value of applied voltage corresponding to the threshold point and the frequency of arising current oscillations.
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BibTeX
author = {К. N. Alekseev and А. G. Balanov and A. A. Koronovskii and V. А. Maksimenko and О. I. Moskalenko and A. E. Hramov},
title = {NONLINEAR DYNAMICS OF SMALL PERTURBATION OF SEMICONDUCTOR SUPERLATTICE REFERENCE STATE NEAR GENERATION THRESHOLD},
year = {2012},
journal = {Izvestiya VUZ. Applied Nonlinear Dynamics},
volume = {20},number = {5},
url = {https://old-andjournal.sgu.ru/en/articles/nonlinear-dynamics-of-small-perturbation-of-semiconductor-superlattice-reference-state-near},
address = {Саратов},
language = {russian},
doi = {10.18500/0869-6632-2012-20-5-165-178},pages = {165--178},issn = {0869-6632},
keywords = {Spatially-extended media,Semiconductor superlattice,perturbation of reference state,linear evolution operator,instability development.},
abstract = {Present research is focused on the dynamics of the perturbation of semiconductor superlattice (SL) reference state near the generation threshold as for the case of influence of titled magnetic field as for the case when the magnetic field is absent. The evolution of the considered perturbation is described with the help of linearized evolution operator. It has been shown that increase of the applied voltage leads to decrease of the attenuation coefficient, which becomes zero in bifurcation point where stationary state loses it’s stability. Meanwhile, the applied titled magnetic field has an strong effect on the perturbation dynamics, value of applied voltage corresponding to the threshold point and the frequency of arising current oscillations. }}