CHAOTIC RF GENERATOR BASED ON OSCILLATOR WITH 2.5 DEGREES OF FREEDOM


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Efremova Е. V., Atanov N. V., Dmitriev Y. А. CHAOTIC RF GENERATOR BASED ON OSCILLATOR WITH 2.5 DEGREES OF FREEDOM. Izvestiya VUZ. Applied Nonlinear Dynamics, 2007, vol. 15, iss. 1, pp. 23-41. DOI: https://doi.org/10.18500/0869-6632-2007-15-1-23-41


Chaotic RF generator with bipolar transistor is proposed. Mathematical model of  the generator, oscillator with 2.5 degrees of freedom, is investigated. Generator dynamics is analyzed with Advanced Design System (ADS) software using parameters of a real transistor, properties of the board substrate are taken into account by simulation. ADS simulation results are compared with experimental data. It is shown that the use of ADS software for analysis of generator dynamics and account for the board properties and topology allow to get simulation results closer to the experimental one.

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DOI: 
10.18500/0869-6632-2007-15-1-23-41
Literature

1. Дмитриев А.С., Кяргинский Б.Е., Максимов Н. А., Панас А.И., Старков С.О. Перспективы создания прямохаотических систем связи в радио- и СВЧ-диапазонах // Радиотехника. 2000. No 3. С. 9.

2. Дмитриев А.С., Панас А.И. Динамический хаос. Новый носитель информации для систем связи. М.: Физматлит. 2002.

3. Dmitriev A.S., Kyarginsky B.Ye., Panas A.I. and Starkov S.O. Experiments on ultra wideband direct chaotic information transmission in microwave band // Int. J. Bifurcation and Chaos. 2003. Vol. 13, No 6. P. 1495.

4. Бельский Ю.Л., Дмитриев А.С. Передача информации с помощью детерминированного хаоса // Радиотехника и электроника. 1993. Т. 38, No 7. С. 1310.

5. Dmitriev A.S., Panas A.I., Starkov S.O. Ring oscillating systems and their application to the synthesis of chaos generators // Int. J. of Bifurcation and Chaos. 1996. Vol. 6, No 5. P. 851.

6. Кальянов Э.В., Иванов В.П., Лебедев М.Н. Экспериментальное исследование транзисторного автогенератора с запаздывающей обратной связью // Радиотехника и электроника. 1982. Т. 27, No 5. С. 982.

7. Дмитриев А.С., Иванов В.П., Лебедев М.Н. Модель транзисторного генератора с хаотической динамикой // Радиотехника и электроника. 1988. Т. 33, No 5. С. 1085.

8. Kennedy M. Chaos in Colpitts oscillator // IEEE Trans. Circ. System.-1. 1994. Vol. 41, No 11. P. 771.

9. Feo O., Maggio G., Kennedy M. The Colpitts oscillator: Families of periodic solutions and their bifurcations // Int. J. of Bifurcation and Chaos. 2000. Vol. 10, No 5. P. 935.

10. Максимов Н.А., Панас А.И. Однотранзисторный генератор полосовых хаотических сигналов радиодиапазона // Зарубеж. радиоэлектрон. Успехи современной радиоэлектроники. 2000. No 11. C. 61.

11. Дмитриев А.С., Ефремова Е.В. Транзисторные генераторы хаоса с заданной формой спектра мощности колебаний // Радиотехника. 2005. No 8. С. 67.

12. Antognetti P. and Massobrio G. Semiconductor device modeling with SPICE. New- York: McGraw-Hill, Second Edition, 1993.

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BibTeX

@article{Ефремова -IzvVUZ_AND-15-1-23,
author = {Е. V. Efremova and N. V. Atanov and Yu. А. Dmitriev},
title = {CHAOTIC RF GENERATOR BASED ON OSCILLATOR WITH 2.5 DEGREES OF FREEDOM},
year = {2007},
journal = {Izvestiya VUZ. Applied Nonlinear Dynamics},
volume = {15},number = {1},
url = {https://old-andjournal.sgu.ru/en/articles/chaotic-rf-generator-based-on-oscillator-with-25-degrees-of-freedom},
address = {Саратов},
language = {russian},
doi = {10.18500/0869-6632-2007-15-1-23-41},pages = {23--41},issn = {0869-6632},
keywords = {-},
abstract = {Chaotic RF generator with bipolar transistor is proposed. Mathematical model of  the generator, oscillator with 2.5 degrees of freedom, is investigated. Generator dynamics is analyzed with Advanced Design System (ADS) software using parameters of a real transistor, properties of the board substrate are taken into account by simulation. ADS simulation results are compared with experimental data. It is shown that the use of ADS software for analysis of generator dynamics and account for the board properties and topology allow to get simulation results closer to the experimental one. }}