The paper presents the results of experimental investigation of stationary distributions of the electric field and the charge carrier concentration in the PIN diode. The investigations have been carried out by use of nearfield scanning microwave microscope. Numerical calculations of these values have been performed taking into account the dependence of the mobility and the diffusion coefficient of electrons and holes on the electric field. The alternating maxima and minima form of the field distribution near the contacts and the conductivity has been demonstrated.
